cascadable silicon bipolar mmic amplifier technical data features ? usable gain to 5.5 ghz ? high gain: 32.5 db typical at 0.1 ghz 22.5 db typical at 1.0 ghz ? low noise figure: 3.3 db typical at 1.0 ghz ? surface mount plastic package ? tape-and-reel packaging option available [1] MSA-0886 86 plastic package description the MSA-0886 is a high perfor- mance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a low cost, surface mount plastic package. this mmic is designed for use as a general purpose 50 w gain block above 0.5 ghz and can be used as a high gain transistor below this frequency. typical applications include narrow and moderate band if and rf amplifiers in commer- cial and industrial applications. the msa-series is fabricated using agilents 10 ghz f t , 25 ghz f max , silicon bipolar mmic process which uses nitride self-alignment, typical biasing configuration c block c block r bias v cc > 10 v v d = 7.8 v rfc (optional) in out msa 4 1 2 3 note: 1. refer to packaging section tape- and-reel packaging for semiconduc- tor devices. ion implantation, and gold metalli- zation to achieve excellent perfor- mance, uniformity and reliability. the use of an external bias resistor for temperature and current stability also allows bias flexibility.
2 MSA-0886 absolute maximum ratings parameter absolute maximum [1] device current 65 ma power dissipation [2,3] 500 mw rf input power +13 dbm junction temperature 150 c storage temperature C65 c to 150 c thermal resistance [2,4] : q jc = 140 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 7.1 mw/ c for t c > 80 c. 4. see measurements section thermal resistance for more information. g p power gain (|s 21 | 2 ) f = 0.1 ghz db 32.5 f = 1.0 ghz 20.5 22.5 input vswr f = 0.1 to 3.0 ghz 2.1:1 output vswr f = 0.1 to 3.0 ghz 1.9:1 nf 50 w noise figure f = 1.0 ghz db 3.3 p 1 db output power at 1 db gain compression f = 1.0 ghz dbm 12.5 ip 3 third order intercept point f = 1.0 ghz dbm 27.0 t d group delay f = 1.0 ghz psec 140 v d device voltage v 6.2 7.8 9.4 dv/dt device voltage temperature coefficient mv/ c C17.0 note: 1. the recommended operating current range for this device is 20 to 40 ma. typical performance as a function of current is on the following page. electrical specifications [1] , t a = 25 c symbol parameters and test conditions: i d = 36 ma, z o = 50 w units min. typ. max. vswr part number ordering information part number no. of devices container MSA-0886-tr1 1000 7" reel MSA-0886-blk 100 antistatic bag for more information, see tape and reel packaging for semiconductor devices.
3 MSA-0886 typical scattering parameters [1] (z o = 50 w , t a = 25 c, i d = 36 ma) freq. ghz mag ang db mag ang db mag ang mag ang k 0.1 .63 C22 32.5 42.12 160 C36.7 .015 54 .62 C24 0.68 0.2 .56 C41 31.3 36.68 143 C33.9 .020 50 .55 C46 0.64 0.4 .43 C69 28.6 26.94 119 C29.1 .035 52 .43 C79 0.69 0.6 .35 C88 26.4 20.89 104 C27.0 .045 49 .34 C103 0.77 0.8 .30 C104 24.2 16.21 93 C25.3 .054 50 .29 C124 0.83 1.0 .27 C116 22.4 13.20 83 C24.2 .062 49 .26 C139 0.87 1.5 .27 C144 19.2 9.15 65 C21.6 .083 46 .23 C172 0.93 2.0 .31 C166 16.7 6.84 49 C19.5 .105 41 .22 163 0.96 2.5 .35 178 14.8 5.50 38 C17.9 .128 36 .21 149 0.96 3.0 .40 162 12.9 4.41 25 C17.4 .135 30 .20 132 1.01 3.5 .45 149 11.4 3.72 13 C16.8 .145 25 .19 124 1.02 4.0 .51 137 9.9 3.14 1 C16.1 .157 19 .18 121 1.01 5.0 .61 116 7.3 2.31 C22 C15.7 .164 10 .17 130 1.00 6.0 .68 100 4.6 1.69 C42 C15.2 .173 4 .23 143 0.95 note: 1. a model for this device is available in the device models section. s 11 s 21 s 12 s 22 typical performance, t a = 25 c (unless otherwise noted) g p (db) 0.1 0.3 0.5 1.0 3.0 6.0 frequency (ghz) figure 1. typical power gain vs. frequency, i d = 36 ma. 2 046810 v d (v) figure 2. device current vs. voltage. 0 5 10 15 20 25 30 35 0 10 20 30 40 gain flat to dc i d (ma) t c = +85 c t c = +25 c t c = ?5 c figure 3. output power at 1 db gain compression, nf and power gain vs. case temperature, f = 1.0 ghz, i d =36ma. frequency (ghz) figure 4. output power at 1 db gain compression vs. frequency. frequency (ghz) figure 5. noise figure vs. frequency. 3.0 2.5 3.5 4.0 4.5 nf (db) 0.1 0.2 0.3 0.5 2.0 1.0 4.0 0.1 0.2 0.3 0.5 2.0 1.0 4 6 8 10 16 14 12 p 1 db (dbm) i d = 36 ma i d = 40 ma i d = 20 ma 2 3 4 11 12 13 21 22 23 ?5 +25 0 +55 +85 p 1 db (dbm) nf (db) gp (db) temperature ( c) nf p 1 db g p i d = 36 ma i d = 20 ma i d = 20 ma i d = 36 ma i d = 40 ma
www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5965-9547e (11/99) 86 plastic package dimensions 4 0.51 0.13 (0.020 0.005) 2.34 0.38 (0.092 0.015) 2.67 0.38 (0.105 0.15) 1 3 2 2.16 0.13 (0.085 0.005) dimensions are in millimeters (inches) 1.52 0.25 (0.060 0.010) 0.66 0.013 (0.026 0.005) 0.203 0.051 (0.006 0.002) 0.30 min (0.012 min) c l 45 5 typ. 8 max 0 min ground rf input rf output and dc bias ground a08
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